BUK9K8R7-40EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 16500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.5 EUR |
| 3000+ | 1.41 EUR |
| 7500+ | 1.34 EUR |
| 10500+ | 1.28 EUR |
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Technische Details BUK9K8R7-40EX Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q100.
Weitere Produktangebote BUK9K8R7-40EX nach Preis ab 1.21 EUR bis 3.41 EUR
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BUK9K8R7-40EX | Hersteller : Nexperia |
MOSFET BUK9K8R7-40E/SOT1205/LFPAK56D |
auf Bestellung 1471 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 18745 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9K8R7-40EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 30A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK9K8R7-40EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K8R7-40EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |