BUK9K8R7-40EX Nexperia
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 210+ | 0.72 EUR |
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Technische Details BUK9K8R7-40EX Nexperia
Description: MOSFET 2N-CH 40V 30A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK9K8R7-40EX nach Preis ab 0.59 EUR bis 2.39 EUR
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BUK9K8R7-40EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 8205 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K8R7-40EX | Hersteller : Nexperia |
MOSFETs BUK9K8R7-40E/SOT1205/LFPAK56D |
auf Bestellung 4041 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K8R7-40EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 30A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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BUK9K8R7-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK9K8R7-40EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K8R7-40EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |