BUK9M15-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 47A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 47A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.91 EUR |
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Produktbewertung abgeben
Technische Details BUK9M15-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 47A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 75W (Ta), Vgs(th) (Max) @ Id: 2.45V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M15-60EX nach Preis ab 0.74 EUR bis 6.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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BUK9M15-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 47A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 75W (Ta) Vgs(th) (Max) @ Id: 2.45V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2094 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9M15-60EX | Hersteller : Nexperia | MOSFET BUK9M15-60E/SOT1210/mLFPAK |
auf Bestellung 18599 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9M15-60EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M15-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 47 A, 0.011 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 75W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm |
auf Bestellung 3635 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M15-60EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M15-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 47 A, 0.011 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 75W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm |
auf Bestellung 3635 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M15-60EX | Hersteller : NXP |
2xN-MOSFET 60V 47A 5V,10V 75W AUTOMOTIVE BUK9M15-60EX TBUK9m15-60ex Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9M15-60EX | Hersteller : Nexperia | Trans MOSFET N-CH 60V 47A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M15-60EX | Hersteller : NEXPERIA | Trans MOSFET N-CH 60V 47A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M15-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M15-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |