BUK9M24-80LX Nexperia
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.4 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.66 EUR |
| 1500+ | 0.61 EUR |
| 3000+ | 0.55 EUR |
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Technische Details BUK9M24-80LX Nexperia
Description: BUK9M24-80L/SOT1210/MLFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V, Power Dissipation (Max): 67W (Ta), Vgs(th) (Max) @ Id: 2.05V @ 60µA, Supplier Device Package: LFPAK33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M24-80LX nach Preis ab 1.09 EUR bis 2.6 EUR
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BUK9M24-80LX | Hersteller : Nexperia USA Inc. |
 Description: BUK9M24-80L/SOT1210/MLFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V Power Dissipation (Max): 67W (Ta) Vgs(th) (Max) @ Id: 2.05V @ 60µA Supplier Device Package: LFPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M24-80LX | Hersteller : Nexperia USA Inc. |
Description: BUK9M24-80L/SOT1210/MLFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V Power Dissipation (Max): 67W (Ta) Vgs(th) (Max) @ Id: 2.05V @ 60µA Supplier Device Package: LFPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Qualification: AEC-Q101 |
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