auf Bestellung 3212 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.03 EUR |
| 32+ | 1.66 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.99 EUR |
| 1500+ | 0.84 EUR |
| 3000+ | 0.82 EUR |
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Technische Details BUK9M28-80EX Nexperia
Description: MOSFET N-CH 80V 33A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M28-80EX nach Preis ab 1.11 EUR bis 2.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9M28-80EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 33A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 983 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9M28-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M28-80EX - Leistungs-MOSFET, n-Kanal, 80 V, 33 A, 0.02 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 75W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M28-80EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M28-80EX - Leistungs-MOSFET, n-Kanal, 80 V, 33 A, 0.02 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 75W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M28-80EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 33A Automotive 8-Pin LFPAK EP T/R |
auf Bestellung 375000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M28-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 33A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M28-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 33A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M28-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 70mΩ Mounting: SMD Gate charge: 16.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M28-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 33A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9M28-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 70mΩ Mounting: SMD Gate charge: 16.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |