BUK9M34-100EX Nexperia
| Anzahl | Preis |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.56 EUR |
| 1500+ | 0.54 EUR |
| 3000+ | 0.52 EUR |
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Technische Details BUK9M34-100EX Nexperia
Description: MOSFET N-CH 100V 29A LFPAK33, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK9M34-100EX nach Preis ab 0.95 EUR bis 2.29 EUR
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BUK9M34-100EX | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 29A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M34-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.29 EUR |
| 13+ | 1.43 EUR |
| 50+ | 1.07 EUR |
| 100+ | 0.95 EUR |