
BUK9M42-60EX Nexperia
auf Bestellung 7817 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
569+ | 0.26 EUR |
1000+ | 0.25 EUR |
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
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Technische Details BUK9M42-60EX Nexperia
Description: MOSFET N-CH 60V 22A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M42-60EX nach Preis ab 0.19 EUR bis 0.80 EUR
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BUK9M42-60EX | Hersteller : Nexperia |
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auf Bestellung 7817 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M42-60EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M42-60EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3499 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M42-60EX | Hersteller : Nexperia |
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auf Bestellung 1941 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M42-60EX | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 44W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm |
auf Bestellung 1464 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M42-60EX | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 44W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm |
auf Bestellung 1464 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M42-60EX | Hersteller : NEXPERIA |
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BUK9M42-60EX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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BUK9M42-60EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.2A Pulsed drain current: 86A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 95mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M42-60EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.2A Pulsed drain current: 86A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 95mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |