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BUK9M43-100EX

BUK9M43-100EX Nexperia USA Inc.


BUK9M43-100E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 25A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.9 EUR
Mindestbestellmenge: 1500
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Technische Details BUK9M43-100EX Nexperia USA Inc.

Description: MOSFET N-CH 100V 25A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK9M43-100EX nach Preis ab 0.81 EUR bis 2.1 EUR

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BUK9M43-100EX BUK9M43-100EX Hersteller : Nexperia USA Inc. BUK9M43-100E.pdf Description: MOSFET N-CH 100V 25A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3755 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
Mindestbestellmenge: 13
BUK9M43-100EX BUK9M43-100EX Hersteller : Nexperia BUK9M43_100E-1539583.pdf MOSFET BUK9M43-100E/SOT1210/mLFPAK
auf Bestellung 6240 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.1 EUR
31+ 1.71 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
1500+ 0.86 EUR
3000+ 0.81 EUR
Mindestbestellmenge: 25
BUK9M43-100EX BUK9M43-100EX Hersteller : NEXPERIA 1804796664571154buk9m43-100e.pdf Trans MOSFET N-CH 100V 25A Automotive 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M43-100EX BUK9M43-100EX Hersteller : Nexperia 1804796664571154buk9m43-100e.pdf Trans MOSFET N-CH 100V 25A Automotive AEC-Q101 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M43-100EX BUK9M43-100EX Hersteller : Nexperia 1804796664571154buk9m43-100e.pdf Trans MOSFET N-CH 100V 25A Automotive AEC-Q101 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M43-100EX Hersteller : NEXPERIA BUK9M43-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M43-100EX Hersteller : NEXPERIA BUK9M43-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar