BUK9Q12-40HJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: LOGIC LEVEL N-CHANNEL MOSFET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Supplier Device Package: MLPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 43+ | 0.41 EUR |
| 53+ | 0.34 EUR |
| 100+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9Q12-40HJ Nexperia USA Inc.
Description: LOGIC LEVEL N-CHANNEL MOSFET IN, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Drain to Source Voltage (Vdss): 40 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: MLPAK33, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote BUK9Q12-40HJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
BUK9Q12-40HJ | Hersteller : Nexperia USA Inc. |
Description: LOGIC LEVEL N-CHANNEL MOSFET IN Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Drain to Source Voltage (Vdss): 40 V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: MLPAK33 Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |