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BUK9Q4R6-40HJ

BUK9Q4R6-40HJ Nexperia USA Inc.


BUK9Q4R6-40H.pdf
Hersteller: Nexperia USA Inc.
Description: BUK9Q4R6-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details BUK9Q4R6-40HJ Nexperia USA Inc.

Description: BUK9Q4R6-40H/SOT8002/MLPAK33, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 2.05V @ 1mA, Power Dissipation (Max): 84W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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BUK9Q4R6-40HJ BUK9Q4R6-40HJ Hersteller : Nexperia USA Inc. BUK9Q4R6-40H.pdf Description: BUK9Q4R6-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH