| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.31 EUR |
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Technische Details BUK9Y07-30B,115 Nexperia
Description: MOSFET N-CH 30V 75A LFPAK56, Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 105W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote BUK9Y07-30B,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BUK9Y07-30B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A LFPAK56Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9Y07-30B,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 30V 75A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



