| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.57 EUR |
| 1500+ | 0.48 EUR |
| 3000+ | 0.39 EUR |
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Technische Details BUK9Y107-80EX Nexperia
Description: MOSFET N-CH 80V 11.8A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9Y107-80EX nach Preis ab 0.61 EUR bis 1.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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BUK9Y107-80EX | Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 11.8A LFPAK56Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V |
auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9Y107-80EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 11.8A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Description: MOSFET N-CH 80V 11.8A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.61 EUR |