| Anzahl | Preis |
|---|---|
| 3+ | 1.02 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| 1500+ | 0.4 EUR |
| 3000+ | 0.33 EUR |
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Technische Details BUK9Y107-80EX Nexperia
Description: MOSFET N-CH 80V 11.8A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9Y107-80EX nach Preis ab 0.51 EUR bis 1.02 EUR
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BUK9Y107-80EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 11.8A LFPAK56Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V |
auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y107-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 11.8A LFPAK56 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
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