| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.66 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| 1500+ | 0.37 EUR |
| 3000+ | 0.36 EUR |
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Technische Details BUK9Y12-40E,115 Nexperia
Description: MOSFET N-CH 40V 52A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK9Y12-40E,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BUK9Y12-40E,115 | Nexperia |
 MOSFET N-CH 40V LFPAK Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BUK9Y12-40E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 52A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BUK9Y12-40E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 52A LFPAK56 Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9Y12-40E,115 |
|
Hersteller: Nexperia
MOSFET N-CH 40V LFPAK Транзистори
MOSFET N-CH 40V LFPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9Y12-40E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK9Y12-40E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 52A LFPAK56
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH