| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.18 EUR |
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Technische Details BUK9Y12-55B,115 Nexperia
Description: MOSFET N-CH 55V 61.8A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9Y12-55B,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9Y12-55B,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 55V 61.8A LFPAK56Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
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