Technische Details BUK9Y153-100E,115 Nexperia
Description: NEXPERIA - BUK9Y153-100E,115 - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.117 ohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 9.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 37W, Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.117ohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote BUK9Y153-100E,115 nach Preis ab 0.31 EUR bis 2.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BUK9Y153-100E,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 9.4A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BUK9Y153-100E,115 | Nexperia |
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BUK9Y153-100E,115 | Nexperia |
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BUK9Y153-100E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 9.4A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8675 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BUK9Y153-100E,115 | Nexperia |
MOSFETs BUK9Y153-100E/SOT669/LFPAK |
auf Bestellung 7782 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BUK9Y153-100E,115 | NEXPERIA |
Description: NEXPERIA - BUK9Y153-100E,115 - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.117 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 37W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.117ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 559 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BUK9Y153-100E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.38 EUR |
| 3000+ | 0.35 EUR |
| 4500+ | 0.33 EUR |
| 7500+ | 0.31 EUR |
| BUK9Y153-100E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.38 EUR |
| 3000+ | 0.35 EUR |
| BUK9Y153-100E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 100V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.38 EUR |
| 3000+ | 0.33 EUR |
| BUK9Y153-100E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.46 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| BUK9Y153-100E,115 |
|
Hersteller: Nexperia
MOSFETs BUK9Y153-100E/SOT669/LFPAK
MOSFETs BUK9Y153-100E/SOT669/LFPAK
auf Bestellung 7782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.4 EUR |
| 1500+ | 0.37 EUR |
| 3000+ | 0.33 EUR |
| BUK9Y153-100E,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK9Y153-100E,115 - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.117 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 37W
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.117ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9Y153-100E,115 - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.117 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 37W
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.117ohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 559 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 2.59 EUR |
| 154+ | 1.51 EUR |
| 238+ | 0.9 EUR |
| 500+ | 0.69 EUR |