BUK9Y19-55B,115

Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 18nC
On-state resistance: 17.3mΩ
Power dissipation: 85W
Gate-source voltage: ±15V
Drain current: 46A
Drain-source voltage: 55V
Pulsed drain current: 184A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1992 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: Nexperia
MOSFETs BUK9Y19-55B/SOT669/LFPAK