BUK9Y22-100E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.93 EUR |
| 3000+ | 0.86 EUR |
| 4500+ | 0.82 EUR |
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Technische Details BUK9Y22-100E,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y22-100E,115 nach Preis ab 0.78 EUR bis 3.13 EUR
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BUK9Y22-100E,115 | Hersteller : Nexperia |
MOSFETs BUK9Y22-100E/SOT669/LFPAK |
auf Bestellung 2930 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 49A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4520 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y22-100E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 49A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y22-100E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK9Y22-100E,115 | Hersteller : NEXPERIA |
BUK9Y22-100E.115 SMD N channel transistors |
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