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Technische Details BUK9Y22-30B,115 Nexperia
Description: MOSFET N-CH 30V 37.7A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 59.4W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK9Y22-30B,115
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BUK9Y22-30B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 37.7A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 59.4W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
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