Technische Details BUK9Y25-80E,115 Nexperia
Description: MOSFET N-CH 80V 37A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y25-80E,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
BUK9Y25-80E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 37A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |


