BUK9Y40-55B,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 26A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1500+ | 0.49 EUR |
| 3000+ | 0.45 EUR |
| 4500+ | 0.43 EUR |
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Technische Details BUK9Y40-55B,115 Nexperia USA Inc.
Description: MOSFET N-CH 55V 26A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y40-55B,115 nach Preis ab 0.41 EUR bis 1.81 EUR
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BUK9Y40-55B,115 | Nexperia |
MOSFETs BUK9Y40-55B/SOT669/LFPAK |
auf Bestellung 3503 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y40-55B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 26A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7428 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9Y40-55B,115 |
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Hersteller: Nexperia
MOSFETs BUK9Y40-55B/SOT669/LFPAK
MOSFETs BUK9Y40-55B/SOT669/LFPAK
auf Bestellung 3503 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| 1500+ | 0.49 EUR |
| 3000+ | 0.41 EUR |
| BUK9Y40-55B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 26A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 26A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7428 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 16+ | 1.13 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |