BUK9Y41-80E,115 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.49 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details BUK9Y41-80E,115 Nexperia
Description: MOSFET N-CH 80V 24A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y41-80E,115 nach Preis ab 0.46 EUR bis 2.31 EUR
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BUK9Y41-80E,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 24A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
MOSFETs BUK9Y41-80E/SOT669/LFPAK |
auf Bestellung 6810 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y41-80E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 24A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9Y41-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.63 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.65 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.76 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
MOSFETs BUK9Y41-80E/SOT669/LFPAK
MOSFETs BUK9Y41-80E/SOT669/LFPAK
auf Bestellung 6810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.93 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.51 EUR |
| 1500+ | 0.5 EUR |
| 3000+ | 0.46 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 24A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 24A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.45 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |