Technische Details BUK9Y41-80E,115 Nexperia
Description: MOSFET N-CH 80V 24A LFPAK56, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 64W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9Y41-80E,115 nach Preis ab 0.43 EUR bis 2.31 EUR
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BUK9Y41-80E,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 24A LFPAK56Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y41-80E,115 | Nexperia |
MOSFETs SOT669 N-CH 80V 24A |
auf Bestellung 39977 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y41-80E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 24A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9Y41-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 24A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 24A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.63 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.64 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 80V 24A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.75 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia
MOSFETs SOT669 N-CH 80V 24A
MOSFETs SOT669 N-CH 80V 24A
auf Bestellung 39977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.48 EUR |
| 1500+ | 0.46 EUR |
| 9000+ | 0.43 EUR |
| BUK9Y41-80E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 24A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 24A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.45 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |