| Anzahl | Preis |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.96 EUR |
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Technische Details BUK9Y4R4-40E,115 Nexperia
Description: MOSFET N-CH 40V 100A LFPAK56, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 147W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9Y4R4-40E,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BUK9Y4R4-40E,115 | Nexperia |
 MOSFET N-channel 40 V 4.4 mo FET Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BUK9Y4R4-40E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BUK9Y4R4-40E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9Y4R4-40E,115 |
|
Hersteller: Nexperia
MOSFET N-channel 40 V 4.4 mo FET Транзистори
MOSFET N-channel 40 V 4.4 mo FET Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9Y4R4-40E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 100A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK9Y4R4-40E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH