Technische Details BUK9Y58-75B,115 Nexperia
Description: NEXPERIA - BUK9Y58-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 20.73 A, 0.047 ohm, SC-100, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 75V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 20.73A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.65V, euEccn: NLR, Verlustleistung: 60.4W, Bauform - Transistor: SC-100, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.047ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote BUK9Y58-75B,115 nach Preis ab 0.45 EUR bis 2.26 EUR
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BUK9Y58-75B,115 | Nexperia |
 Trans MOSFET N-CH 75V 20.73A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y58-75B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 20.73A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 60.4W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y58-75B,115 | Nexperia |
MOSFETs SOT669 N-CH 75V 20.73A |
auf Bestellung 104847 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y58-75B,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 20.73A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 60.4W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10050 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y58-75B,115 | NEXPERIA |
Description: NEXPERIA - BUK9Y58-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 20.73 A, 0.047 ohm, SC-100, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20.73A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.65V euEccn: NLR Verlustleistung: 60.4W Bauform - Transistor: SC-100 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9Y58-75B,115 |
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Hersteller: Nexperia
Trans MOSFET N-CH 75V 20.73A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 75V 20.73A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4500+ | 0.45 EUR |
| BUK9Y58-75B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.55 EUR |
| 3000+ | 0.5 EUR |
| 4500+ | 0.49 EUR |
| BUK9Y58-75B,115 |
|
Hersteller: Nexperia
MOSFETs SOT669 N-CH 75V 20.73A
MOSFETs SOT669 N-CH 75V 20.73A
auf Bestellung 104847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.54 EUR |
| 1500+ | 0.5 EUR |
| 3000+ | 0.48 EUR |
| BUK9Y58-75B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.15 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| BUK9Y58-75B,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK9Y58-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 20.73 A, 0.047 ohm, SC-100, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20.73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.65V
euEccn: NLR
Verlustleistung: 60.4W
Bauform - Transistor: SC-100
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.047ohm
SVHC: Lead (27-Jun-2024)
Description: NEXPERIA - BUK9Y58-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 20.73 A, 0.047 ohm, SC-100, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20.73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.65V
euEccn: NLR
Verlustleistung: 60.4W
Bauform - Transistor: SC-100
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.047ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 2.26 EUR |
| 156+ | 1.49 EUR |
| 233+ | 0.93 EUR |
| 500+ | 0.74 EUR |