Technische Details BUK9Y8R7-60E,115 Nexperia
Description: NEXPERIA - BUK9Y8R7-60E,115 - Leistungs-MOSFET, n-Kanal, 60 V, 86 A, 0.006 ohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 86A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 147W, Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.006ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote BUK9Y8R7-60E,115 nach Preis ab 0.74 EUR bis 3.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BUK9Y8R7-60E,115 | Nexperia |
 Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y8R7-60E,115 | Nexperia |
Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y8R7-60E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 86A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y8R7-60E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 86A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y8R7-60E,115 | Nexperia |
MOSFETs BUK9Y8R7-60E/SOT669/LFPAK |
auf Bestellung 2424 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y8R7-60E,115 | NEXPERIA |
Description: NEXPERIA - BUK9Y8R7-60E,115 - Leistungs-MOSFET, n-Kanal, 60 V, 86 A, 0.006 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 86A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 147W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1517 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9Y8R7-60E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.79 EUR |
| 3000+ | 0.74 EUR |
| BUK9Y8R7-60E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 86A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.93 EUR |
| BUK9Y8R7-60E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.05 EUR |
| BUK9Y8R7-60E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.39 EUR |
| 11+ | 1.95 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.29 EUR |
| BUK9Y8R7-60E,115 |
|
Hersteller: Nexperia
MOSFETs BUK9Y8R7-60E/SOT669/LFPAK
MOSFETs BUK9Y8R7-60E/SOT669/LFPAK
auf Bestellung 2424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.84 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.17 EUR |
| 1500+ | 0.95 EUR |
| BUK9Y8R7-60E,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK9Y8R7-60E,115 - Leistungs-MOSFET, n-Kanal, 60 V, 86 A, 0.006 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 86A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 147W
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.006ohm
SVHC: Lead (27-Jun-2024)
Description: NEXPERIA - BUK9Y8R7-60E,115 - Leistungs-MOSFET, n-Kanal, 60 V, 86 A, 0.006 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 86A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 147W
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.006ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 1517 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 3.82 EUR |
| 101+ | 2.31 EUR |
| 145+ | 1.49 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |