Technische Details BUL147
Description: TRANS NPN 400V 8A TO-220, Power - Max: 125 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: TO-220, Frequency - Transition: 14MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote BUL147
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
BUL147 | onsemi |
Description: TRANS NPN 400V 8A TO-220Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220 Frequency - Transition: 14MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BUL147 | onsemi |
Bipolar Transistors - BJT 8A 400V 125W NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUL147 |
![]() |
Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
Frequency - Transition: 14MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN 400V 8A TO-220
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
Frequency - Transition: 14MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUL147 |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 8A 400V 125W NPN
Bipolar Transistors - BJT 8A 400V 125W NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



