BUZ111S Infineon Technologies
| Anzahl | Preis |
|---|---|
| 301+ | 1.83 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.46 EUR |
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Technische Details BUZ111S Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Weitere Produktangebote BUZ111S nach Preis ab 1.62 EUR bis 1.87 EUR
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BUZ111S | Infineon Technologies |
 Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ111S | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
auf Bestellung 2182 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUZ111S | INFINEON |
09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUZ111S |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 301+ | 1.83 EUR |
| 500+ | 1.62 EUR |
| BUZ111S |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 240+ | 1.87 EUR |
| BUZ111S |
|
Hersteller: INFINEON
09+
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)