
BUZ31H3046XKSA1 Infineon Technologies

Description: MOSFET N-CH 200V 14.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 7239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
406+ | 1.2 EUR |
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Technische Details BUZ31H3046XKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO262-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote BUZ31H3046XKSA1 nach Preis ab 1.3 EUR bis 1.3 EUR
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BUZ31H3046XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ31H3046XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 6539 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ31H3046XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 6539 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ31H3046XKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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BUZ31H3046XKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
Produkt ist nicht verfügbar |
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BUZ31H3046XKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |