BUZ31HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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Technische Details BUZ31HXKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote BUZ31HXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BUZ31HXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 14.5A TO220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUZ31HXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH