BUZ32 H Infineon Technologies

Description: MOSFET N-CH 200V 9.5A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc).