BUZ73AH3046 Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details BUZ73AH3046 Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V.
Weitere Produktangebote BUZ73AH3046
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
BUZ73A H3046 | Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Drain to Source Voltage (Vdss): 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BUZ73A H3046 | Infineon Technologies |
MOSFETs N-Ch 200V 5.5A TO220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUZ73A H3046 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Description: MOSFET N-CH 200V 5.5A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUZ73A H3046 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 200V 5.5A TO220-3
MOSFETs N-Ch 200V 5.5A TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH