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BUZ76

BUZ76 Harris Corporation

INFNS24971-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
495+1.5 EUR
Mindestbestellmenge: 495
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Technische Details BUZ76 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V.

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BUZ76 Hersteller : Harris Semiconductor INFNS24971-1.pdf?t.download=true&u=5oefqw (MFET,N-CH,400V,3A,40W,TO-220)
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)