Weitere Produktangebote BXP4N65F nach Preis ab 0.26 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BXP4N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13nC Pulsed drain current: 16A Power dissipation: 37W |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BXP4N65F |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 16A
Power dissipation: 37W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 16A
Power dissipation: 37W
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 217+ | 0.39 EUR |
| 243+ | 0.35 EUR |
| 290+ | 0.3 EUR |
| 323+ | 0.26 EUR |


