Weitere Produktangebote BXT330N06D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
BXT330N06D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Case: TO252 Mounting: SMD Pulsed drain current: 80A Power dissipation: 27.8W Gate charge: 24.5nC Polarisation: unipolar Drain current: 14A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 45mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BXT330N06D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Case: TO252
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 24.5nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 45mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Case: TO252
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 24.5nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 45mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


