Technische Details BY203-16STAP Vishay
Category: THT universal diodes, Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57, Type of diode: rectifying, Case: SOD57, Max. off-state voltage: 1.6kV, Max. forward voltage: 2.4V, Load current: 0.25A, Semiconductor structure: single diode, Reverse recovery time: 300ns, Max. forward impulse current: 20A, Leakage current: 2µA, Kind of package: Ammo Pack, Features of semiconductor devices: avalanche breakdown effect; fast switching, Mounting: THT, Anzahl je Verpackung: 15000 Stücke.
Weitere Produktangebote BY203-16STAP
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BY203-16STAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 2.4V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 300ns Max. forward impulse current: 20A Leakage current: 2µA Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching Mounting: THT Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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BY203-16STAP | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
Produkt ist nicht verfügbar |
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BY203-16STAP | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |
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BY203-16STAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 2.4V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 300ns Max. forward impulse current: 20A Leakage current: 2µA Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching Mounting: THT |
Produkt ist nicht verfügbar |