BY25FQ256ESEIG(R) BYTe Semiconductor
Hersteller: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (8x6)
Write Cycle Time - Word, Page: 100µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5 ns
Memory Organization: 32M x 8
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 3.46 EUR |
| 25+ | 3.37 EUR |
| 50+ | 3.3 EUR |
| 100+ | 3.21 EUR |
| 250+ | 3.12 EUR |
| 500+ | 3.05 EUR |
| 1000+ | 2.96 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details BY25FQ256ESEIG(R) BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 166 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (8x6), Write Cycle Time - Word, Page: 100µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, DTR, Access Time: 5 ns, Memory Organization: 32M x 8.
Weitere Produktangebote BY25FQ256ESEIG(R)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BY25FQ256ESEIG(R) | BYTe Semiconductor |
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (8x6) Write Cycle Time - Word, Page: 100µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5 ns Memory Organization: 32M x 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BY25FQ256ESEIG(R) |
|
Hersteller: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (8x6)
Write Cycle Time - Word, Page: 100µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5 ns
Memory Organization: 32M x 8
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (8x6)
Write Cycle Time - Word, Page: 100µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5 ns
Memory Organization: 32M x 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH