Produkte > BYTE SEMICONDUCTOR > BY25FQ256ESEIG(R)

BY25FQ256ESEIG(R) BYTe Semiconductor

BY25FQ256ES.pdf
Hersteller: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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Technische Details BY25FQ256ESEIG(R) BYTe Semiconductor

Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1, Memory Type: Non-Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Supplier Device Package: 8-WSON (8x6), Memory Format: FLASH, Clock Frequency: 166 MHz, Memory Organization: 32M x 8, Access Time: 5 ns, Memory Interface: SPI - Quad I/O, QPI, DTR, Write Cycle Time - Word, Page: 100µs, 2.4ms, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA).

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BY25FQ256ESEIG(R) BYTe Semiconductor BY25FQ256ES.pdf Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BY25FQ256ESEIG(R) BY25FQ256ES.pdf
Hersteller: BYTe Semiconductor
Description: 256 MBIT, 3.0V (2.7V TO 3.6V), 1
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-WSON (8x6)
Memory Format: FLASH
Clock Frequency: 166 MHz
Memory Organization: 32M x 8
Access Time: 5 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 100µs, 2.4ms
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH