BY25Q128ESWIG(R) BYTe Semiconductor
Hersteller: BYTe SemiconductorDescription: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 25+ | 1.32 EUR |
| 50+ | 1.29 EUR |
| 100+ | 1.26 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.20 EUR |
| 1000+ | 1.17 EUR |
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Technische Details BY25Q128ESWIG(R) BYTe Semiconductor
Description: IC FLASH 128MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 120 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (5x6), Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7.5 ns, Memory Organization: 16M x 8, DigiKey Programmable: Verified.
Weitere Produktangebote BY25Q128ESWIG(R)
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BY25Q128ESWIG(R) | Hersteller : BYTe Semiconductor |
Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 DigiKey Programmable: Verified |
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