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BY25Q256FSEIG(R)

BY25Q256FSEIG(R) BYTe Semiconductor

BY25Q256FS.pdf Hersteller: BYTe Semiconductor
Description: IC FLASH 256MBIT SPI/QUAD
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (8x6)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 32M x 8
DigiKey Programmable: Verified
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1000+2.68 EUR
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Technische Details BY25Q256FSEIG(R) BYTe Semiconductor

Description: IC FLASH 256MBIT SPI/QUAD, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 100 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (8x6), Write Cycle Time - Word, Page: 50µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 7 ns, Memory Organization: 32M x 8, DigiKey Programmable: Verified.

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BY25Q256FSEIG(R) BY25Q256FSEIG(R) Hersteller : BYTe Semiconductor BY25Q256FS.pdf Description: IC FLASH 256MBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (8x6)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 32M x 8
DigiKey Programmable: Verified
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