BY25Q40GWTIG(R) BYTe Semiconductor
Hersteller: BYTe SemiconductorDescription: IC FLASH 4MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 17 ns
Memory Organization: 512K x 8
auf Bestellung 3955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 87+ | 0.20 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.18 EUR |
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Technische Details BY25Q40GWTIG(R) BYTe Semiconductor
Description: IC FLASH 4MBIT SPI/QUAD 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 100 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 3ms, Memory Interface: SPI - Quad I/O, Access Time: 17 ns, Memory Organization: 512K x 8.
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BY25Q40GWTIG(R) | Hersteller : BYTe Semiconductor |
Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 |
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