BY527TAP VISHAY
Hersteller: VISHAYCategory: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Max. load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 16pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.65V
Leakage current: 10µA
Reverse recovery time: 4µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14310 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| 5000+ | 0.29 EUR |
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Technische Details BY527TAP VISHAY
Category: THT universal diodes, Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.8kV, Load current: 2A, Max. load current: 12A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Capacitance: 16pF, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.65V, Leakage current: 10µA, Reverse recovery time: 4µs, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BY527TAP nach Preis ab 0.29 EUR bis 0.43 EUR
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BY527TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 2A Max. load current: 12A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 16pF Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.65V Leakage current: 10µA Reverse recovery time: 4µs |
auf Bestellung 14310 Stücke: Lieferzeit 14-21 Tag (e) |
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BY527TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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Produkt ist nicht verfügbar |