BYG10M-M3/TR3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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Technische Details BYG10M-M3/TR3 Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
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