BYG10YHE3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details BYG10YHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 4 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BYG10YHE3_A/H nach Preis ab 0.18 EUR bis 0.62 EUR
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BYG10YHE3_A/H | Vishay General Semiconductor |
Rectifiers 1600V Vrrm; 1.5A If DO-214AC (SMA) |
auf Bestellung 7583 Stücke: Lieferzeit 10-14 Tag (e) |
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BYG10YHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1.6KV 1.5A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
auf Bestellung 4702 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYG10YHE3_A/H |
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Hersteller: Vishay General Semiconductor
Rectifiers 1600V Vrrm; 1.5A If DO-214AC (SMA)
Rectifiers 1600V Vrrm; 1.5A If DO-214AC (SMA)
auf Bestellung 7583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.22 EUR |
| 1800+ | 0.18 EUR |
| BYG10YHE3_A/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 4702 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.34 EUR |


