BYG20GHE3_A/I Vishay General Semiconductor
auf Bestellung 7430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.23 EUR |
| 5000+ | 0.21 EUR |
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Technische Details BYG20GHE3_A/I Vishay General Semiconductor
Description: DIODE AVAL 400V 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BYG20GHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BYG20GHE3_A/I | Hersteller : Vishay |
Diode Switching 400V 1.5A 2-Pin SMA T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BYG20GHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BYG20GHE3_A\I | Hersteller : Vishay | Rectifiers 1.5A,400V,75nS FS AVALANCHE SMD |
Produkt ist nicht verfügbar |


