BYG20J TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
350+ | 0.21 EUR |
385+ | 0.19 EUR |
440+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BYG20J TAIWAN SEMICONDUCTOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 27A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 1.5A, Max. load current: 5A, Reverse recovery time: 75ns, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; ultrafast switching, Case: SMA, Max. forward voltage: 1.4V, Max. forward impulse current: 27A, Leakage current: 50µA, Kind of package: reel; tape, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote BYG20J nach Preis ab 0.06 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BYG20J | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 30A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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BYG20J | Hersteller : Diotec Semiconductor | Rectifiers Ultrafast, SMA, 600V, 1.5A, 150C |
auf Bestellung 12530 Stücke: Lieferzeit 14-28 Tag (e) |
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BYG20J | Hersteller : Taiwan Semiconductor | Rectifiers 75ns, 1.5A, 600V, High Efficient Recovery Rectifier |
auf Bestellung 11562 Stücke: Lieferzeit 14-28 Tag (e) |
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BYG20J | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 6049 Stücke: Lieferzeit 21-28 Tag (e) |
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BYG20J | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 27A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Max. load current: 5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; ultrafast switching Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 27A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 21480 Stücke: Lieferzeit 7-14 Tag (e) |
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BYG20J | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 27A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Max. load current: 5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; ultrafast switching Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 27A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 21480 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG20J | Hersteller : Diotec Electronics | Diode Switching 600V 1.5A 2-Pin SMA T/R |
auf Bestellung 21480 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG20J | Hersteller : MIC |
1.5A; 600V; packaging: reel; BYG20J diode rectifying DP BYG20J Anzahl je Verpackung: 5000 Stücke |
auf Bestellung 10412 Stücke: Lieferzeit 7-14 Tag (e) |
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BYG20J Produktcode: 30931 |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle |
Produkt ist nicht verfügbar
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BYG20J | Hersteller : Diotec Semiconductor | Diode, Ultrasast, SMA, 600V, 1.5A, 75ns |
Produkt ist nicht verfügbar |
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BYG20J | Hersteller : Taiwan Semiconductor | Rectifier Diode Switching 600V 1.5A 75ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG20J | Hersteller : Taiwan Semiconductor | Diode Switching 600V 1.5A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG20J | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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BYG20J | Hersteller : Vishay Semiconductors | Rectifiers 1.5A,600V,75NS SF AVALANCHE SMD |
Produkt ist nicht verfügbar |