BYG21K-M3/TR Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details BYG21K-M3/TR Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 120 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BYG21K-M3/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BYG21K-M3/TR | Hersteller : Vishay General Semiconductor |
Rectifiers 1.5A,800V,120nS Fast Avalanche,SMD |
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