BYG23T-M3/TR3 Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.24 EUR |
| 5000+ | 0.23 EUR |
| 7500+ | 0.21 EUR |
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Technische Details BYG23T-M3/TR3 Vishay General Semiconductor
Description: DIODE AVALANCHE 1.3KV 1A DO214AC, Current - Reverse Leakage @ Vr: 5 µA @ 1300 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1300 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BYG23T-M3/TR3 nach Preis ab 0.27 EUR bis 1.09 EUR
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BYG23T-M3/TR3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 1.3KV 1A DO214ACSpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns |
auf Bestellung 4392 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYG23T-M3/TR3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
auf Bestellung 4392 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.27 EUR |