BYM07-100-E3/83 Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.22 EUR |
| 2500+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
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Technische Details BYM07-100-E3/83 Vishay General Semiconductor
Description: DIODE GP 100V 500MA DO213AA, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AA (GL34), Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AA (Glass), Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote BYM07-100-E3/83 nach Preis ab 0.24 EUR bis 0.81 EUR
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BYM07-100-E3/83 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 100V 500MA DO213AACurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA (GL34) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Packaging: Cut Tape (CT) |
auf Bestellung 8215 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYM07-100-E3/83 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GP 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 8215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |