BYM10-1000-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
| Anzahl | Preis |
|---|---|
| 1500+ | 0.27 EUR |
| 3000+ | 0.24 EUR |
| 4500+ | 0.23 EUR |
| 7500+ | 0.22 EUR |
| 10500+ | 0.21 EUR |
| 15000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BYM10-1000-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Avalanche, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote BYM10-1000-E3/96 nach Preis ab 0.13 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BYM10-1000-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,MELF plastic; Ufmax: 1.2V Mounting: SMD Kind of package: 7 inch reel Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 1kV Quantity in set/package: 1500pcs. Case: DO213AB; MELF plastic Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 8pF Leakage current: 50µA |
auf Bestellung 7248 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
BYM10-1000-E3/96 | Vishay General Semiconductor |
Rectifiers 1000 Volt 1.0 Amp Glass Passivated |
auf Bestellung 38495 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BYM10-1000-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Avalanche Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 31339 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BYM10-1000-E3/96 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,MELF plastic; Ufmax: 1.2V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,MELF plastic; Ufmax: 1.2V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
auf Bestellung 7248 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 239+ | 0.3 EUR |
| 264+ | 0.27 EUR |
| 391+ | 0.18 EUR |
| 468+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| BYM10-1000-E3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1000 Volt 1.0 Amp Glass Passivated
Rectifiers 1000 Volt 1.0 Amp Glass Passivated
auf Bestellung 38495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 1500+ | 0.15 EUR |
| BYM10-1000-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 31339 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 27+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |