BYM10-50-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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Technische Details BYM10-50-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Avalanche, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote BYM10-50-E3/96 nach Preis ab 0.12 EUR bis 0.62 EUR
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BYM10-50-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V Mounting: SMD Kind of package: 7 inch reel Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 50V Quantity in set/package: 1500pcs. Case: DO213AB; MELF plastic Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 8pF Leakage current: 50µA |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
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BYM10-50-E3/96 | Vishay General Semiconductor |
Rectifiers 50 Volt 1.0 Amp Glass Passivated |
auf Bestellung 2539 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM10-50-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 1A DO213AB Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Technology: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
auf Bestellung 4675 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYM10-50-E3/96 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Mounting: SMD
Kind of package: 7 inch reel
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Quantity in set/package: 1500pcs.
Case: DO213AB; MELF plastic
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 8pF
Leakage current: 50µA
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 404+ | 0.18 EUR |
| 472+ | 0.15 EUR |
| 603+ | 0.12 EUR |
| BYM10-50-E3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 50 Volt 1.0 Amp Glass Passivated
Rectifiers 50 Volt 1.0 Amp Glass Passivated
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.38 EUR |
| 13+ | 0.23 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.13 EUR |
| BYM10-50-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 4675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 48+ | 0.37 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.21 EUR |