BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
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Technische Details BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AB, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF (Glass), Packaging: Tape & Reel (TR).
Weitere Produktangebote BYM11-1000-E3/97 nach Preis ab 0.2 EUR bis 0.77 EUR
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BYM11-1000-E3/97 | Vishay General Semiconductor |
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated |
auf Bestellung 8469 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM11-1000-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
auf Bestellung 9900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BYM11-1000-E3/97 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated
Rectifiers 1000 Volt 1.0A 500ns Glass Passivated
auf Bestellung 8469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.22 EUR |
| 5000+ | 0.2 EUR |
| BYM11-1000-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.22 EUR |
| 2000+ | 0.21 EUR |