BYM12-400-E3/97 Vishay General Semiconductor
auf Bestellung 5004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
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Technische Details BYM12-400-E3/97 Vishay General Semiconductor
Description: DIODE GEN PURP 400V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 14pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Weitere Produktangebote BYM12-400-E3/97 nach Preis ab 0.23 EUR bis 0.81 EUR
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BYM12-400-E3/97 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 4541 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM12-400-E3/97 | Hersteller : Vishay |
Diode Switching 400V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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BYM12-400-E3/97 | Hersteller : Vishay |
Diode Switching 400V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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BYM12-400-E3/97 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213ABPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |


