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Technische Details BYM12-50-E3/96 Vishay
Description: DIODE GEN PURP 50V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.
Weitere Produktangebote BYM12-50-E3/96 nach Preis ab 0.21 EUR bis 1 EUR
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BYM12-50-E3/96 | Vishay |
 Rectifier Diode Switching 50V 1A 50ns 2-Pin DO-213AB T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BYM12-50-E3/96 | Vishay General Semiconductor |
Rectifiers 50 Volt 1.0A 50ns Glass Passivated |
auf Bestellung 1415 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM12-50-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO213AB Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
auf Bestellung 722 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYM12-50-E3/96 |
|
Hersteller: Vishay
Rectifier Diode Switching 50V 1A 50ns 2-Pin DO-213AB T/R
Rectifier Diode Switching 50V 1A 50ns 2-Pin DO-213AB T/R
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.23 EUR |
| 3000+ | 0.21 EUR |
| BYM12-50-E3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 50 Volt 1.0A 50ns Glass Passivated
Rectifiers 50 Volt 1.0A 50ns Glass Passivated
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.21 EUR |
| BYM12-50-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 722 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |